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| GL5401 Description Package Dimensions 1/2 PNP E PITAX I AL PL ANAR T RANSI STOR The GL5401 is designer for general purpose applications requiring high breakdown voltages. REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0C 10 C 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. C 13 T YP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -160 -150 -5 -600 1.5 V V V mA W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob at Ta = 25 : Min. -160 -150 -5 50 80 50 100 Typ. 160 Max. -50 -50 -200 -500 -1 -1 400 300 6 MHz pF Unit V V V nA nA mV mV V V IC=-100uA, IE =0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-120V , IE=0 VEB=-3V , IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Test Conditions Classification Of hFE Rank Range A 80 - 200 N 100 - 240 C 160 - 400 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165 |
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